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G3525 2SB726 757EV V6319 67F065 50074 TS821 PSEK6012
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    GTM
Part No. GE07N70C-a
OCR Text ...Source On-Resistance Total Gate charge 3 Gate-Source charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Tim...a a Test Conditions IS=7a, VGS=0V, Tj=25 : VD= VG=0V, VS=1.5V Continuous Source Current (Body ...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET

File Size 383.90K  /  5 Page

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    AP2763W-A AP2763W-A-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. aP2763W-a aP2763W-a-14
OCR Text ...3w- a fig 7. gate charge characteristics fig 8. typical capacitance characteristics ? fig 9. max...a 1 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c i...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET
Fast Switching Characteristic

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    SSM2761P-A

Silicon Standard Corp.
Part No. SSM2761P-a
OCR Text ... Gate-Source Leakage Total Gate charge 3 Gate-Source charge Gate-Drain ("Miller") charge Turn-on Delay Time Rise Time Turn-off Delay Tim...a 12 9 T C =25 C ID , Drain Current (a) 9 o 10V 6.0V 5.5V ID , Drain Current (a) 6 T ...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET

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    V23990-K222-A-T1-14

Vincotech
Part No. V23990-K222-a-T1-14
OCR Text ...kwirkungskapazit?t tj=125c gate charge q gate tj=25c 15/0 300 30 nc gate ladung tj=125c 220 thermal resistance chip to heatsink per chip w?...a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronic...
Description 2nd Gen. PIM Size 2, 600V / 30a

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    SSM04N70BGP-A

Silicon Standard Corp.
Part No. SSM04N70BGP-a
OCR Text ...ching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as aC/DC converters, SMPS and general off-line switching circuits. 650V 2.4 4a Pb-free; RoHS-compliant TO-220 T...
Description N-channel Enhancement-mode Power MOSFET

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    SSM04N70BGF-A

Silicon Standard Corp.
Part No. SSM04N70BGF-a
OCR Text ...ching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as aC/DC converters, SMPS and general off-line switching circuits. 650V 2.4 4a Pb-free; RoHS-compliant TO-220FM ...
Description N-channel Enhancement-mode Power MOSFET

File Size 544.43K  /  5 Page

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    2N60L-A-TA3-T 2N60L-A-TF3-T 2N60L-A-TM3-T 2N60L-A-TN3-R 2N60L-A-TN3-T 2N60L-B-TA3-T 2N60L-B-TF3-T 2N60L-B-TM3-T 2N60L-B-

Unisonic Technologies
Part No. 2N60L-a-Ta3-T 2N60L-a-TF3-T 2N60L-a-TM3-T 2N60L-a-TN3-R 2N60L-a-TN3-T 2N60L-B-Ta3-T 2N60L-B-TF3-T 2N60L-B-TM3-T 2N60L-B-TN3-R 2N60L-B-TN3-T 2N60LL-a-Ta3-T 2N60LL-a-TF3-T 2N60LL-a-TM3-T 2N60LL-a-TN3-R 2N60LL-a-TN3-T 2N60LL-B-TN3-R 2N60LL-B-TN3-T 2N60LL-B-Ta3-T 2N60LL-B-TF3-T 2N60LL-B-TM3-T
OCR Text ...s fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient D...
Description 2 amps,􀀁600/650 Volts N-CHaNNEL MOSFET

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    Advanced Power Electronics
Part No. aP2761P-a
OCR Text ... =30v - - 100 na q g total gate charge 3 i d =10a - 53 85 nc q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge ...a fig 1. typical output characteristics fig 2. typical output charac...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET

File Size 89.16K  /  4 Page

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    AP04N70BP-A

Advanced Power Electronics Corp.
Part No. aP04N70BP-a
OCR Text ... Gate-Source Leakage Total Gate charge 3 Gate-Source charge Gate-Drain ("Miller") charge Turn-on Delay Time Rise Time Turn-off Delay Tim...a a V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=4a, VGS=0V ...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET

File Size 68.49K  /  6 Page

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